tse.ml-cond.uctoi iptoc/uch, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon transistors general purpose use in power amplifier and switching circuits. features: ?dc current gain specified hfe=20-80?ic=1.0a * low collector-emitter saturation voltage - vce vceo veb 'c ib pd t,,t,to 2N4901 2n4902 2n5087 2n5068 40 60 40 60 2n4903 2n6069 80 80 5.0 5.0 10 1.0 87.5 0.5 - 65 to +200 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbo rejc i max 2.0 unit c/w 100 ? 87.5 |62.5 a 50 q 37.5 ol % 25 . 12.5 0 - o figure -1 power derating 51 "\ 's \ ^ x. s 25 50 75 100 125 150 175 200 tc,temperaturec>c) pnp npn 2N4901 2n5067 2n4902 2n5068 2n4903 2n5069 5.0 ampere complementary silicon power transistors 40-80 volts 87.5 watts to-3 c d b ju h i & i ^i ^ t 3 ^.-^ a o? to ^-, i r pm1.ba3e 2.emtter collector(case) dim a b c d e f g h 1 j k millimeters min 38.75 19.28 7.98 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67 max 39.96 22.23 928 12,19 26.67 1.06 1.82 30.40 17.30 4.36 11.18 nj semi-conductors reserves the right to change test conditions, parameters limi nsm press however nj sem.-conductors assumes no responsibility for any errors or omissions discovered in its u n i sem,-c onductors encourages customers to verify that datasheets are current before placing orders
electrical characteristics (tc = 25c unless otherwise noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) ( lc = 200 ma, i. = 0 ) 2N4901 .2n5067 2n4902.2ns068 2n4903.2n5069 collector cutoff current (vci= rated vce01is = 0) collector cutoff current ( v,.. = rated vce0. vbe(on) = 1.5 v) ( vce = rated vcbo, v^ = 1 .5 v, tc = 150'c ) collector cutoff current ( v^ rated vcbq, ie = 0) emitter cutoff current (v?b-5.0v,ic = 0) vceocsus) 'ceo "cex icbo 'ebo 40 60 80 1.0 0.1 o n 0.1 1.0 v ma ma ma ma on characteristics (1) dc current gain (ic=1.0a,vce = 2.0v) ( lc ? 5.0 a, vcg = 2.0 v ) collector-emitter saturation voltage (ic = 1.0a,ib?0.1 a) (lc = 5.0 a, ib -1.0 a) base-emitter on voltage (ic = 1.0a.vcb = 2.0v) hfe vce,-,) v? 20 7.0 80 0.4 1.5 1.2 v v dynamic characteristics current - gain -bandwidth product (2) (lc=1.0a,v06 = 10v,f*1.0mhz) small-signal current gain ( lc = 0.5 a, vce = 1 0 v, f = 1 .0 khz ) ft ". 4.0 20 mhz (1) pulse test: pulse width - 300 us , duty cycle < 2.0%
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